1 features ? 650-volt schottky rectifer ? ceramic package provides 2.5kv isolation ? zero reverse recovery current ? high-frequency operation ? temperature-independent switching behavior ? positive temperature coeffcient on v f benefts ? electrically isolated package ? essentially no switching losses ? higher effciency ? reduction of heat sink requirements ? parallel devices without thermal runaway applications ? switch mode power supplies (smps) ? boost diodes in pfc or dc/dc stages ? free wheeling diodes in inverter stages ? ac/dc converters package to-220 isolated maximum ratings (t c = 25?c unless otherwise specifed) symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 650 v v rsm surge peak reverse voltage 650 v v dc dc blocking voltage 650 v i f continuous forward current 13 6 a t c =25?c t c =135?c fig. 3 i frm repetitive peak forward surge current 24 16 a t c =25?c, t p = 10 ms, half sine wave t c =110?c, t p = 10 ms, half sine wave i fsm non-repetitive peak forward surge current 63 49 a t c =25?c, t p = 10 ms, half sine wave t c =110?c, t p = 10 ms, half sine wave fig. 8 i f,max non-repetitive peak forward surge current 540 460 a t c =25?c, t p = 10 s, pulse t c =110?c, t p = 10 s, pulse fig. 8 p tot power dissipation 45.5 19.5 w t c =25?c t c =110?c fig. 4 t j , t stg operating junction and storage temperature -55 to +175 ?c to-220 mounting torque 1 8.8 nm lbf-in m3 screw 6-32 screw part number package marking C3D06065I isolated to-220-2 C3D06065I C3D06065I silicon carbide schottky diode z -rec ? rectifier pin 1 pin 2 case v rrm = 650 v i f ( t c =135?c) = 6 a q c = 15 nc C3D06065I rev. b, 01-2016
2 8 12 16 20 reverse leakage current, i rr (ma) t j = 175 c t j = 125 c t j = 75 c t = 25 c 0 4 0 100 200 300 400 500 600 700 800 900 1000 reverse leakage current, i reverse voltage, v r (v) t j = -55 c t j = 25 c electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.5 2.0 1.7 2.4 v i f = 6 a t j =25c i f = 6 a t j =175c fig. 1 i r reverse current 8 15.5 40 160 a v r = 650 v t j =25c v r = 650 v t j =175c fig. 2 q c total capacitive charge 15 nc v r = 400 v, i f = 6 a d i /d t = 500 a/ s t j = 25c fig. 5 c total capacitance 295 28.5 25.5 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 200 v, t j = 25?c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz fig. 6 e c capacitance stored energy 2.3 j v r = 400 v fig. 7 note: this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit note r jc thermal resistance from junction to case 3.3 c/w fig. 9 typical performance figure 1. forward characteristics figure 2. reverse characteristics 0 200 400 600 800 1000 1200 6 8 10 12 14 foward current, i f (a) t j = -55 c t j = 25 c t j = 75 c t j = 175 c t j = 125 c 0 2 4 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 foward current, i foward voltage, v f (v) i f (a) v f (v) v r (v) i r ( m a) C3D06065I rev. b, 01-2016
3 15 20 25 30 35 40 45 i f (a) 10% duty 20% duty 30% duty 50% duty 70% duty dc 0 5 10 15 25 50 75 100 125 150 175 t c (c) figure 3. current derating figure 4. power derating 20 25 30 35 40 45 50 p tot (w) 0 5 10 15 25 50 75 100 125 150 175 t c (c) figure 5. total capacitance charge vs. reverse voltage figure 6. capacitance vs. reverse voltage typical performance 10 15 20 25 capacitive charge, q c (nc) conditions: t j = 25 c 0 5 0 100 200 300 400 500 600 700 capacitive charge, q reverse voltage, v r (v) 150 200 250 300 350 capacitance (pf) conditions: t j = 25 c f test = 1 mhz v test = 25 mv 0 50 100 0 1 10 100 1000 capacitance (pf) reverse voltage, v r (v) i f(peak) (a) t c ?c t c ?c p tot (w) c (pf) v r (v) q c (nc) v r (v) C3D06065I rev. b, 01-2016
4 2 3 4 5 6 capacitance stored energy, e c ( j) 0 1 2 0 100 200 300 400 500 600 700 capacitance stored energy, e reverse voltage, v r (v) typical performance 100 1,000 i fsm (a) t j_initial = 25 c t j_initial = 110 c 10 10e-6 100e-6 1e-3 10e-3 time, t p (s) figure 7. capacitance stored energy figure 8. non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) t p (s) i fsm (a) v r (v) e c ( m j) figure 9. transient thermal impedance 100e-3 1 thermal resistance ( o c/w) 0.5 0.3 0.1 0.05 0.02 0.01 singlepulse 1e-3 10e-3 1e-6 10e-6 100e-6 1e-3 10e-3 100e-3 1 10 time, t p (s) thermal resistance (?c/w) t (sec) C3D06065I rev. b, 01-2016
5 package dimensions package to-220-2 recommended solder pad layout part number package marking C3D06065I isolated to-220-2 C3D06065I to-220-2 note: recommended soldering profles can be found in the applications note here: http://www.wolfspeed.com/power_app_notes/soldering C3D06065I rev. b, 01-2016
6 6 diode model v t r t diode model csd04060 vf t = v t + if*r t v t= 0.965 + (t j * - 1.3*10 - 3 ) r t= 0.096 + (t j * 1.0 6 *10 - 3 ) note: t j = diode junction temperature in degrees celsius, valid from 25c to 175c vf t = v t + if * r t v t = 0.96 + (t j * -1.1*10 -3 ) r t = 0.07 + (t j * 7.4*10 -4 ) C3D06065I rev. b, 01-2016 copyright ? 2016 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your wolfspeed representative or from the product ecology section of our website at http:// www.wolfspeed.com/power/tools-and-support/product-ecology. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemi - cal agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree representative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffc control systems. notes ? cree sic schottky diode portfolio: http://www.wolfspeed.com/power/products#sicschottkydiodes ? schottky diode spice models: http://www.wolfspeed.com/power/tools-and-support/diode-model-request2 ? sic mosfet and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i related links
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